features trenchfet power mosfet si4416dy vishay siliconix document number: 72266 s-31062?rev. e, 26-may-03 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.018 @ v gs = 10 v 9.0 30 0.028 @ v gs = 4.5 v 7.3 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 g s n-channel mosfet d ordering information: si4416dy SI4416DY-T1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 9.0 6.9 continuous drain current (t j = 150 c) a t a = 70 c i d 7.5 5.6 a pulsed drain current (10 s pulse width) i dm 50 a continuous source current (diode conduction) a i s 2.1 1.2 maximum power dissipation a t a = 25 c p d 2.5 1.4 w maximum power dissipation a t a = 70 c p d 1.6 0.9 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typ max unit mi j ti tabit a t 10 sec r 40 50 maximum junction-to-ambient a steady-state r thja 72 90 c/w maximum junction-to-foot (drain) steady-state r thjf 16 20 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4416dy vishay siliconix www.vishay.com 2 document number: 72266 s-31062?rev. e, 26-may-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 25 a on-state drain current b i d(on) v ds 5 v, v gs = 10 v 20 a drain source on state resistance b r ds( ) v gs = 10 v, i d = 9.0 a 0.012 0.018 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 7.3 a 0.019 0.028 forward transconductance b g fs v ds = 15 v, i d = 9.0 a 23 s diode forward voltage b v sd i s = 2.1 a, v gs = 0 v 1.2 v dynamic a gate charge q g v ds = 15 v, v gs = 5 v, i d = 9.0 a 14 20 total gate charge q gt 24 35 nc gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 9.0 a 4.5 nc gate-drain charge q gd ds , gs , d 5.9 gate resistance r g 0.2 1.0 2.4 turn-on delay time t d(on) 16 20 rise time t r v dd = 15 v, r l = 15 10 20 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 34 50 ns fall time t f 13 20 source-drain reverse recovery time t rr i f = 2.1 a, di/dt = 100 a/ s 50 90 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. typical characteristics (25 c unless noted) 0 10 20 30 40 50 012345 0 10 20 30 40 50 012345 v gs = 10 thru 5 v 25 c t c = 125 c -55 c 3 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 4 v
si4416dy vishay siliconix document number: 72266 s-31062?rev. e, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.00 0.02 0.04 0.06 0.08 0.10 0246810 0.00 0.02 0.04 0.06 0.08 0.10 0 1020304050 0 2 4 6 8 10 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 c rss c oss c iss v ds = 15 v i d = 9 a v gs = 10 v i d = 9 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s i d = 9 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) v gs = 4.5 v
si4416dy vishay siliconix www.vishay.com 4 document number: 72266 s-31062?rev. e, 26-may-03 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 72 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 -1 10 -2 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j - temperature ( c)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
